5 HV MOS Drain 面积缩小对latch up 的影响HV IO MOS drain面积 origin:50um*175umpass 200mA @40v new:50um*105um 面积缩小40%Question:drain 面积缩小,latch up性能会降低多少?Ans: 目前無相關 Data 不過面積縮小, 電流密度會增加 若 Latch-up 的路徑是 SCR(PNPN),
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单击此处编辑母版标题样式单击此处编辑母版文本样式第二级第三级第四级第五级1.0um CMOS PROCESS FLOW INTRODUCTION1.0um CMOS PROCESS FLOW INTRODUCTION1.Wafer Start P TYPE <100>8-12OHM-CM2.Wafer laser mark3.Scrubber clean after wafer laser mar
CB2A家具编号图片数量详细物料图纸编号Denniston replyCB-GR-451CB-GR-131CB-GR-141CB-GR-021drawing ID-CB-GR 02Marble topCB-GR-031CB-GR-041drawing ID-CB-GR 04CB-GR-011CB-GR-061drawing ID-CB-GR-06CB-GR-071CB-GR-101CB-GR-11
04112007CS267 Lecture 23TitleThis is our 1st Level BulletThis is our 2nd level bulletThis is our 3rd level bulletsdfsdfsdfThis is our next 1st Level BulletThis is our 2nd level bulletThis is our 3rd l
CB4家具编号图片数量详细物料图纸编号Denniston replyCB-GR-452CB-GR-131CB-GR-141CB-GR-021drawing ID-CB-GR 02Marble topCB-GR-031CB-GR-041CB-GR-011CB-GR-061drawing ID-CB-GR-06CB-GR-071CB-GR-101CB-GR-112CB-GR-081CB-GR-091C
CB5家具编号图片数量详细物料图纸编号Denniston replyCB-GR-131CB-GR-141CB-GR-021drawing ID-CB-GR 02Marble topCB-GR-031CB-GR-041CB-GR-011CB-GR-061drawing ID-CB-GR-06CB-GR-071CB-GR-101CB-GR-111CB-GR-081CB-GR-091CB-GR-542C
SPA-Couple Treatment家具编号图片数量详细物料图纸编号DennistonReplySP-1222=4SP-1312SP-1422SP-1522SP-160SP-170SP-410SP-4212Dressing stool at bathroom Dressing counter (Only at Couple treatment Double Suite)
GR5家具编号图片数量详细物料图纸编号Denniston replyGR-051GR-141GR-152GR-021GR-042GR-121drawing ID-GR-12GR-131GR-031GR-111drawing ID-GR-11GR-101GR-01A1FAB - 03
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